STMicroelectronics STH200N10WF7-2

mpnSTH200N10WF7-2
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	180A (Tc)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	93 nC @ 10 V
Input Capacitance (Ciss.	4430 pF @ 25 V
Mfr	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 175?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-263-3, D?Pak (2 Lead.
Power Dissipation (Max)	340W (Tc)
Product Status	Active
Rds On (Max) @ Id, Vgs	4mOhm @ 90A, 10V
Series	-
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	4.5V @ 250?A