Attributes

Key Value
Base Product NumberSTL4N80
CategoryDiscrete Semiconductor .
Current - Continuous Dr.2.5A (Tc)
Drain to Source Voltage.800 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .10.5 nC @ 10 V
Input Capacitance (Ciss.175 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Power Dissipation (Max)38W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs2.5Ohm @ 1.5A, 10V
SeriesSuperMESH5?
Supplier Device PackagePowerFlat? (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id5V @ 100?A
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