Attributes

Key Value
Base Product NumberSTP105
CategoryDiscrete Semiconductor .
Current - Continuous Dr.80A (Tc)
Drain to Source Voltage.30 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .42 nC @ 4.5 V
Input Capacitance (Ciss.3100 pF @ 25 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusActive
Power Dissipation (Max)140W (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 40A, 10V
SeriesDeepGATE?, STripFET? VI
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.5V @ 250?A
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