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STMicroelectronics STP18NM60ND
manufacturer:

Attributes

Key ^Value
Base Product NumberSTP18
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C13A (Tc)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1030 pF @ 50 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-220-3
Part StatusObsolete
Power Dissipation (Max)110W (Tc)
Rds On (Max) @ Id, Vgs290mOhm @ 6.5A, 10V
SeriesFDmesh? II
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id5V @ 250?A