STMicroelectronics STQ1NK80ZR-AP

mpnSTQ1NK80ZR-AP
brandname: STMicroelectronics
manufacturername: STMicroelectronics

Attributes

Key	Value
Base Product Number	STQ1NK80
Category	Discrete Semiconductor .
Current - Continuous Dr.	300mA (Tc)
Drain to Source Voltage.	800 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	7.7 nC @ 10 V
Input Capacitance (Ciss.	160 pF @ 25 V
Mfr	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Cut Tape (CT)
Package / Case	TO-226-3, TO-92-3 (TO-2.
Part Status	Active
Power Dissipation (Max)	3W (Tc)
Rds On (Max) @ Id, Vgs	16Ohm @ 500mA, 10V
Series	SuperMESH?
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4.5V @ 50?A