Attributes

Key Value
Base Product NumberSTW56
CategoryDiscrete Semiconductor .
Current - Continuous Dr.49A (Tc)
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .93 nC @ 10 V
Input Capacitance (Ciss.3900 pF @ 100 V
MfrSTMicroelectronics
Mounting TypeThrough Hole
Operating Temperature150?C (TJ)
PackageTube
Package / CaseTO-247-4
Part StatusActive
Power Dissipation (Max)358W (Tc)
Rds On (Max) @ Id, Vgs62mOhm @ 24.5A, 10V
SeriesMDmesh? M2
Supplier Device PackageTO-247-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?25V
Vgs(th) (Max) @ Id4V @ 250?A
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