Base Product Number | TSM2307 |
Case | SOT23 |
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25?C | 3A (Tc) |
Drain current | -3A |
Drain to Source Voltage (Vdss) | 30 V |
Drain-source voltage | -30V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature, Series | - |
FET Type | P-Channel |
Gate charge | 10nC, 15nC |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
Gate-source voltage, Vgs (Max) | ?20V |
Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 30 V |
Kind of channel | enhanced |
Manufacturer | TAIWAN SEMICONDUCTOR |
Mfr | Taiwan Semiconductor Corporation |
Mounting | SMD |
Mounting Type | Surface Mount |
On-state resistance | 95m? |
Operating Temperature | 150?C (TJ) |
Package | Tape & Reel (TR) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Part Status | Not For New Designs |
Polarisation | unipolar |
Power dissipation | 800mW |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 95mOhm @ 3A, 10V |
Supplier Device Package | SOT-23 |
Technology | MOSFET (Metal Oxide) |
Type of transistor | P-MOSFET |
Vgs(th) (Max) @ Id | 3V @ 250?A |