Taiwan Semiconductor Corporation BSS123W

mpnBSS123W
brandname: Taiwan Semiconductor Corporation
manufacturername: Taiwan Semiconductor Corporation

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	160mA (Ta)
Drain to Source Voltage.	100 V
Drive Voltage (Max Rds .	4.5V, 10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	2 nC @ 10 V
Input Capacitance (Ciss.	30 pF @ 50 V
Mfr	Taiwan Semiconductor Co.
Mounting Type	Surface Mount
Operating Temperature	-55?C ~ 150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SC-70, SOT-323
Power Dissipation (Max)	298mW (Ta)
Product Status	Active
Rds On (Max) @ Id, Vgs	5Ohm @ 160mA, 10V
Series	-
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?20V
Vgs(th) (Max) @ Id	2.5V @ 250?A