prev
Taiwan Semiconductor Corporation SFT18G A0G
Taiwan Semiconductor Corporationzoom
Description:
Diode 600 V 1A Through Hole TS-1

Attributes

Key Value
Base Product NumberSFT18
Capacitance @ Vr, F10pF @ 4V, 1MHz
CategoryDiscrete Semiconductor Products
Current - Average Rectified (Io)1A
Current - Reverse Leakage @ Vr5 ?A @ 600 V
DescriptionDIODE GEN PURP 600V 1A TS-1
Detailed DescriptionDiode 600 V 1A Through Hole TS-1
Digi-Key Part NumberSFT18GA0G-ND - Tape & Box (TB)
ManufacturerTaiwan Semiconductor Corporation
Manufacturer Product NumberSFT18G A0G
MfrTaiwan Semiconductor Corporation
Mounting TypeThrough Hole
Operating Temperature - Junction-55?C ~ 150?C
PackageTape & Box (TB)
Package / CaseT-18, Axial
Product StatusActive
Reverse Recovery Time (trr)35 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
Supplier Device PackageTS-1
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 1 A