Attributes

Key Value
Base Product NumberTSM2305
CategoryDiscrete Semiconductor .
Current - Continuous Dr.3.2A (Ta)
Drain to Source Voltage.20 V
Drive Voltage (Max Rds .1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .10 nC @ 10 V
Input Capacitance (Ciss.990 pF @ 10 V
MfrTaiwan Semiconductor Co.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23.
Part StatusActive
Power Dissipation (Max)1.25W (Ta)
Rds On (Max) @ Id, Vgs55mOhm @ 3.2A, 4.5V
Series-
Supplier Device PackageSOT-23
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?8V
Vgs(th) (Max) @ Id1V @ 250?A
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