Attributes

Key Value
CategoryDiscrete Semiconductor .
Current - Continuous Dr.9.1A (Ta)
Drain to Source Voltage.30V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .3.2nC @ 10V
Input Capacitance (Ciss.1900pF @ 15V
MfrTaiwan Semiconductor Co.
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 150?C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm.
Part StatusObsolete
Power Dissipation (Max)2.5W (Ta)
Rds On (Max) @ Id, Vgs21mOhm @ 9.1A, 10V
Series-
Supplier Device Package8-SOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id3V @ 250?A
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