Attributes

Key Value
Base Product NumberTSM60
CategoryDiscrete Semiconductor .
Current - Continuous Dr.11A (Tc)
Drain to Source Voltage.600 V
Drive Voltage (Max Rds .10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .20.5 nC @ 10 V
Input Capacitance (Ciss.1040 pF @ 100 V
MfrTaiwan Semiconductor Co.
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-251-3 Short Leads, I.
Power Dissipation (Max)125W (Tc)
Product StatusNot For New Designs
Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
Series-
Supplier Device PackageTO-251 (IPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 250?A
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