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Taiwan Semiconductor Corporation TSM85N10CZ C0G
Description:
N-Channel 100 V 81A (Tc) 210W (Tc) Through Hole TO-220

Attributes

Key ^Value
Base Product NumberTSM85
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C81A (Tc)
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature, Series-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 30 V
MfrTaiwan Semiconductor Corporation
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)210W (Tc)
Product StatusObsolete
Rds On (Max) @ Id, Vgs10mOhm @ 40A, 10V
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id4V @ 250?A