Attributes

Key Value
Base Product NumberCSD18542
CategoryDiscrete Semiconductor .
Current - Continuous Dr.200A (Ta)
Drain to Source Voltage.60 V
Drive Voltage (Max Rds .4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .57 nC @ 10 V
Input Capacitance (Ciss.5070 pF @ 30 V
MfrTexas Instruments
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-4, D?Pak (3 Lead.
Part StatusActive
Power Dissipation (Max)250W (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 100A, 10V
SeriesNexFET?
Supplier Device PackageDDPAK/TO-263-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id2.2V @ 250?A
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