| Additional Feature | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Brand Name, Manufacturer | Texas Instruments |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID) | 620 mA |
| Drain Current-Max (ID) | 2.3 A |
| Drain-source On Resistance-Max | 190 m? |
| DS Breakdown Voltage-Min | 15 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | MS-012AA |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e4 |
| Manufacturer Part Number | TPS1101DRG4 |
| Moisture Sensitivity Level, Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | SOIC-8 |
| Package Shape | RECTANGULAR |