| @Ic (test) (A) | 1.5 |
| @VCE (V), Derate Above 25?C | 5.0 |
| Case | TO129 |
| Forward Current Transfer Ratio (hFE), MIN, Min hFE, Vbr CEO | 20 |
| Ic Max. (A) | 4.5 |
| Icbo Max. @Vcb Max. (A) | 50u |
| Manufacturer | Toshiba |
| Max. hFE | 120 |
| Max. Operating Junction Temperature (Tj) | 175 ?C |
| Max. PD (W) | 30 |
| Maximum Collector Current |Ic max| | 4.5 A |
| Maximum Collector Power Dissipation (Pc) | 30 W |
| Maximum Collector-Base Voltage |Vcb| | 35 V |
| Maximum Collector-Emitter Voltage |Vce| | 20 V |
| Maximum Emitter-Base Voltage |Veb| | 4 V |
| Oper. Temp (?C) Max. | 175 |
| Pinout Equivalence Number | 4-32 |
| Polarity | NPN |
| SKU | 343777 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 400M |
| Transition Frequency (ft): | 200 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 35 |