| @Ic (test) (A) | 1.0 |
| @VCE (V) | 10 |
| Case | TO3 |
| Collector Capacitance (Cc) | 190 pF |
| Derate Above 25?C | 400m |
| Forward Current Transfer Ratio (hFE), MIN | 10 |
| Ic Max. (A) | 3.5 |
| Icbo Max. @Vcb Max. (A) | 10u |
| Manufacturer | Toshiba |
| Max. hFE | 20- |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 50 |
| Maximum Collector Current |Ic max| | 3.5 A |
| Maximum Collector Power Dissipation (Pc) | 50 W |
| Maximum Collector-Base Voltage |Vcb| | 1500 V |
| Maximum Collector-Emitter Voltage |Vce| | 500 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Min hFE | 10 |
| Oper. Temp (?C) Max. | 140 |
| Pinout Equivalence Number | 3-14 |
| Polarity | NPN |
| SKU | 394968 |
| Surface Mounted Yes/No | NO |
| Tr Max. (s) | 1.0u |
| Trans. Freq (Hz) Min. | 3.0M |
| Transition Frequency (ft): | 1.5 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 1.5k |
| Vbr CEO | 500 |