| @Ic (test) (A) | 2.5 |
| @VCE (V), Ic Max. (A) | 10 |
| Case | TO3 |
| Derate Above 25?C | 400m |
| Forward Current Transfer Ratio (hFE), MIN, Min hFE | 15 |
| Icbo Max. @Vcb Max. (A) | 1.0m? |
| Manufacturer | Toshiba |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 50 |
| Maximum Collector Current |Ic max| | 10 A |
| Maximum Collector Power Dissipation (Pc) | 50 W |
| Maximum Collector-Base Voltage |Vcb| | 1000 V |
| Maximum Collector-Emitter Voltage |Vce| | 400 V |
| Maximum Emitter-Base Voltage |Veb| | 8 V |
| Oper. Temp (?C) Max. | 140 |
| Pinout Equivalence Number | N/A |
| Polarity | NPN |
| SKU | 395103 |
| Surface Mounted Yes/No | NO |
| Tr Max. (s) | 1.0u |
| Trans. Freq (Hz) Min. | 6.0M |
| Transition Frequency (ft): | 3 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 1.0k |
| Vbr CEO | 400 |