| C(ob) (F) | 3.5p |
| Case | SOT23 |
| Collector Capacitance (Cc) | 80 pF |
| Forward Current Transfer Ratio (hFE), MIN | 70 |
| Ic Max. (A), Max. PD (W) | 150m |
| Icbo Max. @Vcb Max. (A) | 100n |
| Manufacturer | Toshiba |
| Max. Operating Junction Temperature (Tj) | 125 ?C |
| Maximum Collector Current |Ic max| | 0.15 A |
| Maximum Collector Power Dissipation (Pc) | 0.15 W |
| Maximum Collector-Base Voltage |Vcb| | 60 V |
| Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 125 |
| Pinout Equivalence Number | 3-10 |
| Polarity | NPN |
| SKU | 585960 |
| Surface Mounted Yes/No | YES |
| Trans. Freq (Hz) Min. | 80M |
| Transition Frequency (ft): | 80 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO | 60 |
| Vbr CEO | 50 |