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Description:
TOSHIBA GT50JR22(STA1,E,S) | Transistor: IGBT; 600V; 44A; 115W; TO3P
Attributes
| Key ^ | Value |
|---|---|
| Case | TO3PN |
| Collector current | 44A |
| Collector-emitter voltage | 600V |
| Features of semiconductor devices | integrated anti-parallel diode |
| Gate-emitter voltage | ?25V |
| Kind of package | tube |
| Manufacturer | TOSHIBA |
| Mounting | THT |
| Power dissipation | 115W |
| Pulsed collector current | 100A |
| Turn-off time | 330ns |
| Turn-on time | 250ns |
| Type of transistor | IGBT |