| Built in Bias Resistor R1 | 10 kOhm |
| Case | SOT563F |
| Collector Capacitance (Cc) | 3 pF |
| Forward Current Transfer Ratio (hFE), MIN | 120 |
| Manufacturer | Toshiba |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Maximum Collector Current |Ic max| | 0.1 A |
| Maximum Collector Power Dissipation (Pc) | 0.1 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Polarity | Pre-Biased-NPN*PNP |
| SKU | 361878 |
| SMD Transistor Code | VM |
| Transition Frequency (ft): | 200 MHz |
| Type | Transistor Silicon Pre-Biased-NPN*PNP |