| @Ic (A), Trans. Freq (Hz) Min. | 100M |
| @VCE (test) (V) | 1.0 |
| C(ob) (F) | 22p |
| Case | TO92 |
| Collector Capacitance (Cc) | 18 pF |
| Forward Current Transfer Ratio (hFE), MIN | 63 |
| hfe | 600= |
| Ic Max. (A) | 500m |
| Icbo Max. @Vcb Max. (A) | 100n |
| Manufacturer | Toshiba |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 625m |
| Maximum Collector Current |Ic max| | 0.8 A |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 45 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 150 |
| Pinout Equivalence Number | N/A |
| Polarity | PNP |
| SKU | 584903 |
| Surface Mounted Yes/No | NO |
| Transition Frequency (ft): | 60 MHz |
| Type | Transistor Silicon PNP |
| Vbr CBO | 50 |
| Vbr CEO | 45 |