| @Ic (A) | 2.0m |
| @VCE (test) (V) | 5.0 |
| C(ob) (F) | 4.5p |
| Case | TO92 |
| Collector Capacitance (Cc) | 4.5 pF |
| Derate (Amb) (W/?C) | 4.0m |
| Forward Current Transfer Ratio (hFE), MIN | 110 |
| hfe | 200 |
| Ic Max. (A) | 100m |
| Icbo Max. @Vcb Max. (A) | 100n |
| Manufacturer | Toshiba |
| Max. Operating Junction Temperature (Tj) | 150 ?C |
| Max. PD (W) | 500m |
| Maximum Collector Current |Ic max| | 0.1 A |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 45 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 140 |
| Pinout Equivalence Number | 3-17 |
| Polarity | PNP |
| SKU | 584916 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 300M |
| Transition Frequency (ft): | 150 MHz |
| Type | Transistor Silicon PNP |
| Vbr CBO | 50 |
| Vbr CEO | 45 |