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TOSHIBA TK65G10N1,RQ(S
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Description:
TOSHIBA TK65G10N1,RQ(S | Transistor: N-MOSFET; unipolar; 100V; 136A; Idm: 283A; 156W; D2PA

Attributes

Key ^Value
CaseD2PAK
Drain current136A
Drain-source voltage100V
Gate charge81nC
Gate-source voltage?20V
Kind of channelenhanced
ManufacturerTOSHIBA
MountingSMD
On-state resistance3.8m?
Polarisationunipolar
Power dissipation156W
Pulsed drain current283A
Type of transistorN-MOSFET