| Avalanche Energy Rating (Eas) | 416 mJ |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID), Drain Current-Max (ID) | 8 A |
| Drain-source On Resistance-Max | 840 m? |
| DS Breakdown Voltage-Min | 650 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| Manufacturer | Toshiba America Electronic Components |
| Manufacturer Part Number | TK8A65D |
| Number of Elements | 1 |
| Number of Terminals, Pin Count | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Packaging | - |
| Part Package Code | SC-67 |