| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Drain Current-Max (Abs) (ID), Drain Current-Max (ID) | 5 A |
| Drain-source On Resistance-Max | 95 m? |
| DS Breakdown Voltage-Min | 20 V |
| ECCN Code | EAR99 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| JESD-609 Code | e4 |
| Manufacturer | Toshiba America Electronic Components |
| Manufacturer Part Number | TPCS8302 |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 ?C |
| Package Body Material | PLASTIC/EPOXY |
| Package Description | SMALL OUTLINE, R-PDSO-G8 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Packaging | - |
| Pbfree Code | No |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |