Toshiba Semiconductor and Storage 2SA1930(Q,M)

mpn2SA1930(Q,M)
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	2SA1930
Category	Discrete Semiconductor .
Current - Collector (Ic.	2 A
Current - Collector Cut.	5?A (ICBO)
DC Current Gain (hFE) (.	100 @ 100mA, 5V
Frequency - Transition	200MHz
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package	Bulk
Package / Case	TO-220-3 Full Pack
Power - Max	2 W
Product Status	Obsolete
Series	-
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ .	1V @ 100mA, 1A
Voltage - Collector Emi.	180 V