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Toshiba Semiconductor and Storage 2SA2154MFV-Y,L3F
Description:
Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 150 mW Surface Mount VESM

Attributes

Key ^Value
Base Product Number2SA2154
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)150 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Frequency - Transition80MHz
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseSOT-723
Power - Max150 mW
Product StatusActive
Series-
Supplier Device PackageVESM
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)50 V