Toshiba Semiconductor and Storage 2SD2695,T6F(M

mpn2SD2695,T6F(M
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Current - Collector (Ic.	2 A
Current - Collector Cut.	10?A (ICBO)
DC Current Gain (hFE) (.	2000 @ 1A, 2V
Frequency - Transition	100MHz
Mfr	Toshiba Semiconductor a.
Mounting Type	Through Hole
Operating Temperature	150?C (TJ)
Package / Case	TO-226-3, TO-92-3 Long .
Part Status	Obsolete
Power - Max	900 mW
Series	-
Supplier Device Package	TO-92MOD
Transistor Type	NPN
Vce Saturation (Max) @ .	1.5V @ 1mA, 1A
Voltage - Collector Emi.	60 V