| Categories | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 10A (Ta) |
| Drain to Source Voltage (Vdss) | 450V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 10V |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Manufacturer | Toshiba Semiconductor and Storage |
| Manufacturer Part Number | 2SK3309(Q) |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | 150?C (TJ) |
| Package / Case | TO-220-3, Short Tab |
| Packaging | Tube |
| Power Dissipation (Max) | 65W (Tc) |
| Rds On (Max) @ Id, Vgs | 650 mOhm @ 5A, 10V |
| Series | - |
| Standard Package | 50 |
| Supplier Device Package | TO-220FL |
| Technology | MOSFET (Metal Oxide) |