| Base Product Number | 2SK3309 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 10A (Ta) |
| Drain to Source Voltage (Vdss) | 450 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Operating Temperature | 150?C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3, Short Tab |
| Part Status | Obsolete |
| Power Dissipation (Max) | 65W (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5A, 10V |
| Series | - |
| Supplier Device Package | TO-220FL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ?30V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |