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Toshiba Semiconductor and Storage GT30J341,Q
Description:
IGBT 600 V 59 A 230 W Through Hole TO-3P(N)

Attributes

Key ^Value
Base Product NumberGT30J341
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)59 A
Current - Collector Pulsed (Icm)120 A
Input TypeStandard
MfrToshiba Semiconductor and Storage
Mounting TypeThrough Hole
Operating Temperature175?C (TJ)
PackageTray
Package / CaseTO-3P-3, SC-65-3
Power - Max230 W
Product StatusActive
Reverse Recovery Time (trr)50 ns
Series-
Supplier Device PackageTO-3P(N)
Switching Energy800?J (on), 600?J (off)
Td (on/off) @ 25?C80ns/280ns
Test Condition300V, 30A, 24Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max)600 V