Toshiba Semiconductor and Storage HN1B04FU-Y,LF

mpnHN1B04FU-Y,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	HN1B04
Category	Discrete Semiconductor .
Current - Collector (Ic.	150mA
Current - Collector Cut.	100nA (ICBO)
DC Current Gain (hFE) (.	120 @ 2mA, 6V
Frequency - Transition	150MHz
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	125?C (TJ)
Package	Tape & Reel (TR)
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max	200mW
Product Status	Active
Series	-
Supplier Device Package	US6
Transistor Type	NPN, PNP
Vce Saturation (Max) @ .	250mV @ 10mA, 100mA, 30.
Voltage - Collector Emi.	50V