Toshiba Semiconductor and Storage HN1C01FE-GR,LF

mpnHN1C01FE-GR,LF
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Collector (Ic.	150mA
Current - Collector Cut.	100nA (ICBO)
DC Current Gain (hFE) (.	200 @ 2mA, 6V
Frequency - Transition	80MHz
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	SOT-563, SOT-666
Part Status	Active
Power - Max	100mW
Series	-
Supplier Device Package	ES6
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ .	250mV @ 10mA, 100mA
Voltage - Collector Emi.	50V