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Toshiba Semiconductor and Storage RN1116(TE85L,F)
Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM

Attributes

Key Value
Base Product NumberRN1116
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Frequency - Transition250 MHz
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseSC-75, SOT-416
Power - Max100 mW
Product StatusActive
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)10 kOhms
Series-
Supplier Device PackageSSM
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 250?A, 5mA
Voltage - Collector Emitter Breakdown (Max)50 V