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Toshiba Semiconductor and Storage RN1673(TE85L,F)
Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount US6

Attributes

Key ^Value
Base Product NumberRN1673
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Frequency - Transition, Resistor - Emitter Base (R2), Series-
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max300mW
Product StatusObsolete
Resistor - Base (R1)47kOhms
Supplier Device PackageUS6
Transistor Type2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic300mV @ 250?A, 5mA
Voltage - Collector Emitter Breakdown (Max)50V