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Toshiba Semiconductor and Storage RN1965FE(TE85L,F)
Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Attributes

Key ^Value
Base Product NumberRN1965
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250MHz
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Power - Max100mW
Product StatusObsolete
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Series-
Supplier Device PackageES6
Transistor Type2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic300mV @ 250?A, 5mA
Voltage - Collector Emitter Breakdown (Max)50V