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Toshiba Semiconductor and Storage RN2904,LF
Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Attributes

Key ^Value
Base Product NumberRN2904
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition200MHz
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max200mW
Product StatusObsolete
Resistor - Base (R1), Resistor - Emitter Base (R2)47kOhms
Series-
Supplier Device PackageUS6
Transistor Type2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic300mV @ 250?A, 5mA
Voltage - Collector Emitter Breakdown (Max)50V