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Toshiba Semiconductor and Storage SSM3J118TU(TE85L)

Attributes

Key Value
Base Product NumberSSM3J118
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C1.4A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
FET Feature-
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds137 pF @ 15 V
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Part StatusActive
Power Dissipation (Max)500mW (Ta)
Rds On (Max) @ Id, Vgs240mOhm @ 650mA, 10V
SeriesU-MOSII
Supplier Device PackageUFM
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id-