Toshiba Semiconductor and Storage TBC857B,LM

mpnTBC857B,LM
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Base Product Number	TBC857
Category	Discrete Semiconductor .
Current - Collector (Ic.	150 mA
Current - Collector Cut.	30nA (ICBO)
DC Current Gain (hFE) (.	210 @ 2mA, 5V
Frequency - Transition	80MHz
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C (TJ)
Package	Tape & Reel (TR)
Package / Case	TO-236-3, SC-59, SOT-23.
Part Status	Active
Power - Max	320 mW
Series	-
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ .	650mV @ 100mA, 5mA
Voltage - Collector Emi.	50 V