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Toshiba Semiconductor and Storage TDTC143Z,LM
Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 320 mW Surface Mount SOT-23-3

Attributes

Key Value
CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250 MHz
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Power - Max320 mW
Product StatusActive
Resistor - Base (R1)4.7 kOhms
Series-
Supplier Device PackageSOT-23-3
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500?A, 10mA
Voltage - Collector Emitter Breakdown (Max)50 V