| Base Product Number | TJ60S04 |
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25?C | 60A (Ta) |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6510 pF @ 10 V |
| Mfr | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Operating Temperature | 175?C |
| Package | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Power Dissipation (Max) | 90W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 30A, 10V |
| Series | U-MOSVI |
| Supplier Device Package | DPAK+ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |