Toshiba Semiconductor and Storage TK110U65Z,RQ

mpnTK110U65Z,RQ
brandname: Toshiba Semiconductor and Storage
manufacturername: Toshiba Semiconductor and Storage

Attributes

Key	Value
Category	Discrete Semiconductor .
Current - Continuous Dr.	24A (Ta)
Drain to Source Voltage.	650 V
Drive Voltage (Max Rds .	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) .	40 nC @ 10 V
Input Capacitance (Ciss.	2250 pF @ 300 V
Mfr	Toshiba Semiconductor a.
Mounting Type	Surface Mount
Operating Temperature	150?C
Package	Tape & Reel (TR)
Package / Case	8-PowerSFN
Part Status	Active
Power Dissipation (Max)	190W (Tc)
Rds On (Max) @ Id, Vgs	110mOhm @ 12A, 10V
Series	DTMOSVI
Supplier Device Package	TOLL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	?30V
Vgs(th) (Max) @ Id	4V @ 1.02mA