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Toshiba Semiconductor and Storage TK380P65Y,RQ
Description:
N-Channel 650 V 9.7A (Tc) 80W (Tc) Surface Mount DPAK

Attributes

Key Value
Base Product NumberTK380P65
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C9.7A (Tc)
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds590 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max)80W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs380mOhm @ 4.9A, 10V
SeriesDTMOSV
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4V @ 360?A