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Toshiba Semiconductor and Storage TK8P60W5,RVQ

Attributes

Key Value
Base Product NumberTK8P60
CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25?C8A (Ta)
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds590 pF @ 300 V
MfrToshiba Semiconductor and Storage
Mounting TypeSurface Mount
Operating Temperature150?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Part StatusActive
Power Dissipation (Max)80W (Tc)
Rds On (Max) @ Id, Vgs560mOhm @ 4A, 10V
SeriesDTMOSIV
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)?30V
Vgs(th) (Max) @ Id4.5V @ 400?A