Attributes

Key Value
Base Product NumberTP65H035
CategoryDiscrete Semiconductor .
Current - Continuous Dr.46.5A (Tc)
DescriptionGANFET N-CH 650V 46.5A .
Detailed DescriptionN-Channel 650 V 46.5A (.
Digi-Key Part NumberTP65H035WS-ND
Drain to Source Voltage.650 V
Drive Voltage (Max Rds .12V
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) .36 nC @ 10 V
Input Capacitance (Ciss.1500 pF @ 400 V
ManufacturerTransphorm
Manufacturer Product Nu.TP65H035WS
Manufacturer Standard L.16 Weeks
MfrTransphorm
Mounting TypeThrough Hole
Operating Temperature-55?C ~ 150?C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)156W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs41mOhm @ 30A, 10V
Series-
Supplier Device PackageTO-247-3
TechnologyGaNFET (Cascode Gallium.
Vgs (Max)?20V
Vgs(th) (Max) @ Id4.8V @ 1mA
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