Attributes

Key Value
Base Product NumberUJ4C075
CategoryDiscrete Semiconductor .
Current - Continuous Dr.64A (Tc)
Drain to Source Voltage.750 V
Drive Voltage (Max Rds .12V
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) .37.8 nC @ 15 V
Input Capacitance (Ciss.1400 pF @ 400 V
MfrUnitedSiC
Mounting TypeSurface Mount
Operating Temperature-55?C ~ 175?C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-263-8, D?Pak (7 Lead.
Power Dissipation (Max)278W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs29mOhm @ 40A, 12V
Series-
Supplier Device PackageD2PAK-7
TechnologySiCFET (Silicon Carbide)
Vgs (Max)?20V
Vgs(th) (Max) @ Id6V @ 10mA
prev