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USA Make 2N120
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Description:
2N120 SemiConductor - CASE: Standard MAKE: USA Make

Attributes

Key ^Value
C(ob) (F)7.0p
CaseTO22
Collector Capacitance (Cc)14 pF
Derate (Amb) (W/?C)1.0m
Forward Current Transfer Ratio (hFE), MIN200
Ic Max. (A)25m
Icbo Max. @Vcb Max. (A)2.0u
ManufacturerUSA Make
Max. Operating Junction Temperature (Tj)175 ?C
Max. PD (W)150m
Maximum Collector Current |Ic max|0.025 A
Maximum Collector Power Dissipation (Pc)0.15 W
Maximum Collector-Base Voltage |Vcb|45 V
Maximum Emitter-Base Voltage |Veb|1 V
Oper. Temp (?C) Max.175
Pinout Equivalence NumberN/A
PolarityNPN
SKU777167
Surface Mounted Yes/NoNO
Trans. Freq (Hz) Min.7.0M
Transition Frequency (ft):3 MHz
TypeTransistor Silicon NPN
Vbr CBO45