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USA Make 2N130
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Description:
2N130 SemiConductor - CASE: Standard MAKE: USA Make

Attributes

Key ^Value
CaseTO5
Collector Capacitance (Cc)80 pF
Derate (Amb) (W/?C)2.0m
Forward Current Transfer Ratio (hFE), MIN24
Ic Max. (A)10m
Icbo Max. @Vcb Max. (A)12u
ManufacturerUSA Make
Max. Operating Junction Temperature (Tj)85 ?C
Max. PD (W)85m
Maximum Collector Current |Ic max|0.01 A
Maximum Collector Power Dissipation (Pc)0.085 W
Maximum Collector-Base Voltage |Vcb|25 V
Maximum Collector-Emitter Voltage |Vce|22 V
Maximum Emitter-Base Voltage |Veb|12 V
Pinout Equivalence Number3-12
PolarityPNP
SKU777078
Surface Mounted Yes/NoNO
Transition Frequency (ft):0.3 MHz
TypeTransistor Germanium PNP
Vbr CBO25
Vbr CEO22