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USA Make 2N133
mpn:
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manufacturer:
MPN:
Description:
2N133 SemiConductor - CASE: Standard MAKE: USA Make

Attributes

Key ^Value
@Ic (A)500u
@VCE (test) (V)1.5
CaseTO1
Collector Capacitance (Cc)80 pF
Forward Current Transfer Ratio (hFE), MIN50
hfe25
Ic Max. (A)10m
Icbo Max. @Vcb Max. (A)12u
ManufacturerUSA Make
Max. Operating Junction Temperature (Tj)85 ?C
Max. PD (W)120m
Maximum Collector Current |Ic max|0.01 A
Maximum Collector Power Dissipation (Pc)0.085 W
Maximum Collector-Base Voltage |Vcb|25 V
Maximum Collector-Emitter Voltage |Vce|15 V
Maximum Emitter-Base Voltage |Veb|12 V
Oper. Temp (?C) Max.85
Pinout Equivalence Number3-12
PolarityPNP
SKU777058
Surface Mounted Yes/NoNO
Transition Frequency (ft):0.3 MHz
TypeTransistor Germanium PNP
Vbr CEO15